中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

导航

电子与封装

• •    下一篇

一种耐高温MEMS加速度传感器

张旭辉1,李明昊2,任臣1,陈琳2,杨拥军1, 2   

  1. 1. 河北美泰电子科技有限公司,石家庄  050051;2. 中国电子科技集团公司第十三研究所,石家庄  050051

  • 收稿日期:2025-09-02 修回日期:2025-10-09 出版日期:2025-10-11 发布日期:2025-10-11
  • 通讯作者: 张旭辉

High-temperature MEMS Acceleration Sensor

ZHANG Xuhui1, LI Minghao2, REN Chen1, CHEN Lin2, YANG Yongjun1, 2   

  1. 1. Hebei MT Microsystems Electronic Technology Co., Ltd, Shijiazhuang 050051, China; 2. The 13th Institute of China Electronics Technology Group Corporation, Shijiazhuang 050051, China
  • Received:2025-09-02 Revised:2025-10-09 Online:2025-10-11 Published:2025-10-11

摘要: 介绍一种耐高温MEMS加速度传感器的设计,MEMS敏感元件和ASIC电路均采用SOI工艺设计制造,MEMS敏感元件采用梳齿电容原理,ASIC电路包括基于开关电容电路架构的前置放大器、增益零位调节电路、低通滤波电路以及片上振荡器电路、基准、熔丝型OTP电路单元等,器件采用陶瓷管壳封装,量程达到±15 g,非线性度0.27%,225 ℃高温下的零偏稳定性优于2 mg。该器件在-55~225 ℃温度范围表现出较好的温度特性和高稳定性,可以满足深层油气勘探、航空航天应用高温应用需求。

关键词: MEMS, SOI, 高温电路, 加速度计, 传感器

Abstract: This paper introduces a high-temperature MEMS (Micro-Electro-Mechanical System) accelerometer sensor. The MEMS sensitive element and ASIC circuit are both designed and manufactured using the SOI process. The MEMS sensitive element adopts the comb capacitor principle. The ASIC circuit includes a preamplifier based on the switched capacitor circuit architecture, a gain zero adjustment circuit, a low-pass filter circuit, and an on-chip OSC circuit, a reference, and a fuse-type OTP circuit unit. The device is packaged in a ceramic tube shell, with a range of ±15 g, a nonlinearity of 0.27%, and The zero-bias stability at 225 ℃ is better than 2mg. The device exhibits good temperature characteristics and high stability in the temperature range of -55~225 ℃, which can meet the high-temperature application requirements of deep oil and gas exploration and aerospace applications.

Key words:  MEMS, SOI, high-temperature circuit, accelerometer, sensor