中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

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电子与封装 ›› 2025, Vol. 25 ›› Issue (11): 110101 . doi: 10.16257/j.cnki.1681-1070.2025.0174

• "面向高温极端环境的集成电路及传感器技术与应用"专题 • 上一篇    下一篇

一种耐高温MEMS加速度传感器

张旭辉1,李明昊2,任臣1,陈琳2,杨拥军1,2   

  1. 1. 河北美泰电子科技有限公司,石家庄  050051;2. 中国电子科技集团公司第十三研究所,石家庄  050051
  • 收稿日期:2025-09-02 出版日期:2025-11-28 发布日期:2025-10-11
  • 作者简介:张旭辉(1982—),男,河北石家庄人,硕士,高级工程师,主要研究方向为MEMS传感器、ASIC设计。

High-Temperature MEMS Acceleration Sensor

ZHANG Xuhui1, LI Minghao2, REN Chen1, CHEN Lin2, YANG Yongjun1, 2   

  1. 1. MT Microsystems Co., Ltd.,Shijiazhuang 050051, China; 2. China Electronics Technology Group Corporation No.13 Research Institute, Shijiazhuang 050051, China
  • Received:2025-09-02 Online:2025-11-28 Published:2025-10-11

摘要: 设计一种耐高温微机电系统(MEMS)加速度传感器,MEMS敏感结构采用差分梳齿电容检测原理,MEMS与专用集成电路(ASIC)均使用绝缘体上硅(SOI)工艺设计制造。ASIC包括低噪声前端放大器、增益/零位调节、低通滤波等信号链电路单元,以及片上基准、片上振荡器、熔丝型一次性可编程(OTP)等辅助电路单元。器件采用陶瓷管壳封装,量程达到±15g,非线性度0.31%,225 ℃时零偏稳定性优于0.002g,表现出较好的温度特性和高稳定性。

关键词: MEMS, SOI, 高温电路, 加速度计, 传感器

Abstract: A high-temperature micro-electro-mechanical system (MEMS) acceleration sensor is designed. The MEMS sensing structure employs a differential comb capacitance detection principle, and both the MEMS and the application-specific integrated circuit (ASIC) are designed and manufactured using silicon-on-insulator (SOI) technology. The ASIC includes signal chain circuit units such as a low-noise front-end amplifier, gain/zero-point adjustment, and low-pass filter, as well as auxiliary circuit units such as an on-chip reference, on-chip oscillator, and fuse-type one-time programmable (OTP). The device is packaged in a ceramic housing, achieving a measurement range of ±15g, a nonlinearity of 0.31%, and a zero-bias stability better than 0.002g at 225 °C, exhibiting good temperature characteristics and high stability.

Key words: MEMS, SOI, high-temperature circuit, accelerometer, sensor

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