先进铜填充硅通孔制备技术研究进展*

doi:10.16257/j.cnki.1681-1070.2025.0075

摘要/Abstract

摘要： 随着后摩尔时代的到来，硅通孔（TSV）技术通过填充铜作为垂直的导电通路实现了多层芯片之间的电气互连，提供了一种高性能、高可靠性的3D封装互连方案。综述了铜在TSV先进互连技术中的制备技术，总结并对比了溅射法、化学气相沉积、原子层沉积、化学镀、电接枝技术5种不同的铜种子层制备工艺的沉积机理、性能优劣和改进方案。介绍了硅通孔填充铜的3种不同方案，包括电镀、化学镀和导电浆料填充技术。强调了电镀工艺、电流、添加剂和退火工艺对硅通孔内电镀铜的影响，对应用于硅通孔的铜先进互连技术的未来发展方向提出了展望。

关键词: 铜填充硅通孔, 先进封装, 电镀, 种子层

Abstract: With the advent of the post-Moore's era, through silicon via (TSV) technology has achieved electrical interconnections between multilayer chips by filling copper as vertical conductive pathways, providing a high-performance, high-reliability 3D packaging interconnection solution. The preparation techniques of copper in TSV advanced interconnection technology are reviewed. The deposition mechanisms, performance advantages and disadvantages, and improvement schemes of five different copper seed layer preparation processes including sputtering, chemical vapor deposition, atomic layer deposition, electroless plating and electrografting are summarized and compared. Three different schemes for filling TSV with copper are presented, including electroplating, electroless plating and conductive paste filling techniques. The influence of electroplating process, current, additives and annealing process on the electroplating copper in TSV is emphasized, and the future development direction of advanced copper interconnection technology applied to TSV is prospected.

Key words: copper-filled through silicon via, advanced packaging, electroplating, seed layer

中图分类号:

TN305.94

刘旭东, 撒子成, 李浩喆, 李嘉琦, 田艳红. 先进铜填充硅通孔制备技术研究进展^*[J]. 电子与封装, 2025, 25(5): 050103 .

LIU Xudong, SA Zicheng, LI Haozhe, LI Jiaqi, TIAN Yanhong. Research Progress on Advanced Copper-Filled Through Silicon Via Preparation Technology[J]. Electronics & Packaging, 2025, 25(5): 050103 .

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中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

先进铜填充硅通孔制备技术研究进展^*

Research Progress on Advanced Copper-Filled Through Silicon Via Preparation Technology

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