关键词: 混合键合, 高密度互连, 三维集成, 高带宽内存

Abstract: In the era of the digital economy, the rapid advancement of emerging industries, such as artificial intelligence, high-performance computing, big data, Internet of Things, and autonomous driving, has placed an extremely high demand on computational power. However, as advanced processes approach physical limits and Moore's Law has slowed down significantly, traditional wire bonding technologies are no longer capable of meeting the computational demand of high-performance chips in the digital economy. Against this backdrop, 3D integration technology has emerged as a transformative solution. As a cornerstone of 3D integration technology, hybrid bonding enables bumpless high-density interconnections through the direct bonding of metal-to-metal layers and dielectric-to-dielectric layers. Compared with conventional bonding technology, hybrid bonding not only achieves sub-micron or even nanometer-scale interconnect pitches, but also significantly reduces signal delay and power consumption, thereby enhancing chip bandwidth and capacity, and provides key support for the realization of high-performance chips. In the post-Moore era, hybrid bonding is regarded as a core development direction in advanced packaging, offering narrow-pitch, high-density, and miniaturized interconnect structures to meet the stringent performance requirements of emerging applications on chip performance. Hybrid bonding technology for high-density interconnects is systematically introduced, focusing on the novel metal passivation layer and other key materials as well as the core processes employed. The current status and development trend of hybrid bonding technology in the field of high-bandwidth memory is discussed in depth, aiming to provide valuable insights and guidance for the continuous innovation and evolution of advanced packaging technologies.

Key words: hybrid bonding, high-density interconnect, 3D integration, high-band width memory