基于循环内聚力模型的TSV界面裂纹扩展模拟研究

doi:10.16257/j.cnki.1681-1070.2025.0114

摘要/Abstract

摘要： 硅通孔（TSV）界面可靠性问题一直是电子封装领域关注的热点。通过数值模拟的方法，采用循环内聚力模型研究了温度循环载荷下Cu和SiO₂界面损伤开裂问题。在双线性内聚力模型基础上建立了考虑疲劳损伤的循环内聚力模型，并验证了模型的合理性。模拟了不同尺寸TSV结构在温度循环载荷下Cu和SiO₂界面的损伤开裂现象，并对其规律进行了研究。研究结果表明，温度循环过程中Cu和SiO₂ 2种材料间的界面强度不断减小，界面损伤不断累积，最终裂纹产生于TSV顶部并逐渐扩展。随着TSV直径的增加，裂纹沿Cu和SiO₂界面的扩展速率逐渐增大，Cu的塑性变形和界面损伤开裂有明显的尺寸效应，该研究结果可用于指导TSV互连结构优化设计。

关键词: 硅通孔, 温度循环, 循环内聚力模型, 界面裂纹

Abstract: The through silicon via (TSV) interface reliability problem has been a hot topic in the field of electronic packaging. Through numerical simulation methods, the cyclic cohesive zone model is used to study the damage cracking problem of Cu and SiO2 interface under temperature cyclic loads. A cyclic cohesive zone model considering fatigue damage is established based on the bilinear cohesive zone model, and the rationality of the model is verified. The damage cracking phenomenon of the Cu and SiO₂ interface of TSV structures of different sizes under temperature cycling loads is simulated, and its patterns are studied. The research results show that the interface strength between Cu and SiO₂ materials decreases continuously during the temperature cycling process, and the interface damage accumulates continuously. Finally, cracks are generated at the top of TSV and gradually expand. With the increase of TSV diameter, the crack propagation rate along the interface of Cu and SiO₂ gradually increases. The plastic deformation of Cu and interface damage cracking have obvious size effects. The research results can be used to guide the optimization design of TSV interconnection structure.

Key words: through silicon via, temperature cycle, cyclic cohesive zone model, interface crack

中图分类号:

TN305.94

黄玉亮，秦飞，吴道伟，李逵，张雨婷，代岩伟. 基于循环内聚力模型的TSV界面裂纹扩展模拟研究[J]. 电子与封装, 2025, 25(10): 100202 .

HUANG Yuliang, QIN Fei, WU Daowei, LI Kui, ZHANG Yuting, DAI Yanwei. Simulation Study of TSV Interface Crack Propagation Based on Cyclic Cohesive Zone Model[J]. Electronics & Packaging, 2025, 25(10): 100202 .

参考文献

[1] RYU S K, LU K H, JIANG T F, et al. Effect of thermal stresses on carrier mobility and keep-out zone around through-silicon vias for 3-D integration[J]. IEEE Transactions on Device and Materials Reliability, 2012, 12(2): 255-262.
[2] ZHANG M, QIN F, CHEN S, et al. Protrusion of through-silicon-via (TSV) copper with double annealing processes[J]. Journal of Electronic Materials, 2022, 51(5): 2433-2449.
[3] FISHER D W, TIMONEY P, KO Y U, et al. Correlation study of white light interferometer measurements with atomic force microscope measurements for post-CMP dishing measurements applied to TSV processing[C]// 25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014), Saratoga Springs, NY, 2014: 270-273.
[4] WOLF D I, CROES K, VARELA P O, et al. Cu pumping in TSVs: effect of pre-CMP thermal budget[J]. Microelectronics Reliability, 2011, 51(9/10/11): 1856-1859.
[5] ALFANO G. On the influence of the shape of the interface law on the application of cohesive-zone models[J]. Composites Science and Technology, 2006, 66(6): 723-730.
[6] IBRAHIM G R, ALBARBAR A. A new approach to the cohesive zone model that includes thermal effects[J]. Composites Part B: Engineering, 2019, 167: 370-376.
[7] MOURA D M F S F, GON?ALVES J P M, SILVA F G A. A new energy based mixed-mode cohesive zone model[J]. International Journal of Solids and Structures, 2016, 102/103: 112-119.
[8] WANG Z, XIAN G J. Cohesive zone model prediction of debonding failure in CFRP-to-steel bonded interface with a ductile adhesive[J]. Composites Science and Technology, 2022, 230: 109315.
[9] SUN Z, BENABOU L, DAHOO P R. Prediction of thermo-mechanical fatigue for solder joints in power electronics modules under passive temperature cycling[J]. Engineering Fracture Mechanics, 2013, 107: 48-60.
[10] FEI J B, XU T, ZHOU J Y, et al. Interfacial crack initiation and delamination propagation in Cu-filled TSV structure by incorporating cohesive zone model and finite element method[C]// 2020 IEEE 70th Electronic Components and Technology Conference (ECTC), Orlando, FL, USA, 2020: 1186-1191.
[11] LIANG S B, KE C B, WEI C, et al. Three-dimensional simulation of effects of microstructure evolution and interfacial delamination on Cu protrusion in copper filled through silicon vias by combined Monte Carlo and finite element methods[C]// 2018 IEEE 68th Electronic Components and Technology Conference (ECTC), San Diego, CA, 2018: 2134-2141.
[12] JIANG W G, HALLETT S R, GREEN B G, et al. A concise interface constitutive law for analysis of delamination and splitting in composite materials and its application to scaled notched tensile specimens[J]. International Journal for Numerical Methods in Engineering, 2007, 69(9): 1982-1995.
[13] TAO C C, ZHANG C, JI H L, et al. On the energy release rate extraction and mixed mode behavior of fatigue cohesive model[J]. Composite Structures, 2020, 239: 112038.
[14] PEREIRA K, ABDEL WAHAB M. Fretting fatigue lifetime estimation using a cyclic cohesive zone model[J]. Tribology International, 2020, 141: 105899.
[15] ZHANG J W, ZHU S Y, CAI C B, et al. Experimental and numerical analysis on concrete interface damage of ballastless track using different cohesive models[J]. Construction and Building Materials, 2020, 263: 120859.
[16] TURON A, CAMANHO P P, COSTA J, et al. A damage model for the simulation of delamination in advanced composites under variable-mode loading[J]. Mechanics of Materials, 2006, 38(11): 1072-1089.
[17] 陈志颖. 基于内聚力模型的钢-铝接头结合界面强度研究[D]. 大连：大连理工大学, 2020.
[18] ZHANG M, QIN F, CHEN S, et al. Holding time effect on mechanical properties and protrusion behaviors of through silicon via copper under various annealing processes[J]. Materials Science in Semiconductor Processing, 2023, 158: 107353.
[19] CHEN S, WANG Z Z, EN Y F, et al. The experimental analysis and the mechanical model for the debonding failure of TSV-Cu/Si interface[J]. Microelectronics Reliability, 2018, 91: 52-66.
[20] ZHANG J W, ZHU S Y, CAI C B, et al. Cohesive zone modeling of fatigue crack propagation in slab track interface under cyclic temperature load[J]. Engineering Failure Analysis, 2022, 134: 106028.
[21] LIU X, CHEN Q, DIXIT P, et al. Failure mechanisms and optimum design for electroplated copper Through-Silicon Vias (TSV)[C]// 2009 59th Electronic Components and Technology Conference, San Diego, CA, USA, 2009: 624-629.
[22] WU C L, HUANG R, LIECHTI K M. Characterizing interfacial sliding of through-silicon-via by nano-indentation[J]. IEEE Transactions on Device and Materials Reliability, 2017, 17(2): 355-363.

中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊