关键词: 半导体, 缺陷, 电荷积累, 铜损伤

Abstract: The introduction of low-dielectric-constant materials improves electronic device performance, yet poses a serious challenge to defect management in manufacturing processes. Some microscopic defects may cause the loss of electronic device functions on the wafer, and even the entire wafer may be scrapped. Although the industry has made significant progress in charge management during the manufacturing process, defects caused by charge accumulation still occur. Focusing on the issue of charge accumulation in the manufacturing process of chemical vapor deposition low-dielectric-constant dielectric films, experiments and failure analysis are designed to verify a failure model in which charge accumulation generated during the fabrication of low-dielectric-constant dielectric films causes copper damage defects in the metal layers of subsequent processes. The main reason is that after the manufacturing process of the low dielectric constant film, the charge accumulation is not fully released between the dry etching and wet cleaning processes. Based on the research results of the related experiments, a solution to eliminate defects is proposed, ultimately achieving yield improvement, avoiding large-scale wafer scrap, and maintaining stable mass production on the production line.

Key words: semiconductor, defect, charge accumulation, copper damage