基于玻璃通孔互连技术的集成无源器件发展

doi:10.16257/j.cnki.1681-1070.2025.0149

摘要/Abstract

摘要： 摘要：基于硅通孔的三维集成技术虽然能够提高数据传输带宽与集成度，并且在尺寸、兼容性、性能等方面具有突出优点，但也面临着高频损耗大、工艺成本高等重大挑战，因此非常有必要探索基于新的基板材料的毫米波电路与系统集成技术。玻璃或石英材料能克服硅基板的高频损耗等缺陷，是当前较理想的基板材料。与硅基板相比，玻璃基板作为低介绝缘体，可直接与金属导体接触而不需要绝缘的隔离介质层，其工艺复杂度与成本显著降低，高频电学特性更加稳定，热膨胀系数与硅基板相似，在与硅基芯片键合时产生的热应力较小，进而降低了翘曲、焊点失效等问题，提高了三维封装的可靠性，因此基于玻璃转接板的毫米波集成无源器件（IPD）在保持低成本的同时还能够实现良好的电学特性。介绍了国内基于玻璃通孔技术的三维集成无源器件发展情况，以及随着玻璃通孔技术的发展和孔径尺寸的减小，寄生参数对信号传输的影响。

关键词: 玻璃通孔, 三维集成, 集成无源器件, 射频前端

Abstract: Although the three-dimensional integration technology based on through silicon via can increase the data transmission bandwidth and integration degree, and has outstanding advantages in terms of size, compatibility and performance, it also faces major challenges such as large high-frequency loss and high process cost. Therefore, it is highly necessary to explore the millimeter-wave circuits and system integration technologies based on new substrate materials. Glass or quartz materials can overcome the defects such as high-frequency loss of silicon substrates and are currently relatively ideal substrate materials. Compared with silicon substrates, glass substrates, as low-dielectric insulators, can directly contact metal conductors without the need for an insulating isolation medium layer. Their process complexity and cost are significantly reduced. Their high-frequency electrical properties are more stable, and their coefficient of thermal expansion is similar to that of silicon substrates. When bonding with silicon-based integrated chips, the thermal stress generated is smaller, thereby reducing problems such as warpage and solder joint failure and improving the reliability of three-dimensional packaging. Therefore, the millimeter-wave integrated passive devices (IPDs) based on the glass interposers can achieve good electrical characteristics while maintaining low cost. The development of 3D IPD based on through glass via technology in China is introduced, as well as the influence of parasitic parameters on signal transmission with the development of through glass via technology and the reduction of aperture size.

Key words: through glass via, 3D integration, integrated passive device, ratio frequency front end

中图分类号:

TN454

刘晓贤，廖立航，朱樟明. 基于玻璃通孔互连技术的集成无源器件发展[J]. 电子与封装, 2025, 25(7): 070104 .

LIU Xiaoxian, LIAO Lihang, ZHU Zhangming. Development of Integrated Passive Devices Based on Through Glass Via Interconnect Technology[J]. Electronics & Packaging, 2025, 25(7): 070104 .

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中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊