中国电子学会电子制造与封装技术分会会刊

中国半导体行业协会封测分会会刊

无锡市集成电路学会会刊

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电子与封装

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基于跌落冲击响应的TGV结构可靠性仿真

郭颜赫1,龙旭1,2,3   

  1. 1. 西北工业大学力学与交通运载工程学院先进电子封装材料与结构研究中心,西安  710021;2. 西北工业大学集成电路学院,西安  710021;3. 浙江清华长三角研究院,浙江 嘉兴  314006
  • 收稿日期:2026-04-01 修回日期:2026-07-01 出版日期:2026-07-07 发布日期:2026-07-07
  • 通讯作者: 龙旭
  • 基金资助:
    国家自然科学基金(52475166);国家重点研发计划(2024YFE0204900)

Reliability Simulation of TGV Structure Based on Drop Impact Response

GUO Yanhe1, LONG Xu1,2,3   

  1. 1. Research Center for Advanced Electronic Packaging Materials and Structures, School of Mechanics and Transportation Engineering, Northwestern Polytechnical University, Xi'an 710021, China, 2. School of Integrated Circuits, Northwestern Polytechnical University, Xi'an 710021, China 3. Yangtze Delta Region Institute of Tsinghua University, Jiaxing 314006, China
  • Received:2026-04-01 Revised:2026-07-01 Online:2026-07-07 Published:2026-07-07

摘要: 玻璃通孔(TGV)技术凭借其优异的电学性能和低成本优势,成为三维电子封装的重要发展方向,但由于其材料脆性,在受到跌落冲击时面临可靠性挑战。基于Input-G方法,建立了TGV结构的板级跌落冲击有限元模型,系统研究了其在动态载荷下的力学响应与失效机理。模型中综合考虑了玻璃基板的脆性断裂特性,以及无铅焊点在高应变率下的Johnson-Cook本构关系。仿真结果表明:在1 500g、0.5 ms半正弦冲击载荷下,玻璃孔壁拐角处出现明显最大主应力集中,峰值达32.9 MPa,是TGV结构中的主要潜在风险区域;外围焊点颈部最大主应力峰值达45 MPa,沿对角线方向应力逐渐衰减,表明外围焊点为焊点阵列中的主要应力集中区域;铜柱端部最大等效应力为33.1 MPa,低于纯铜屈服强度参考值,表明铜柱本体发生屈服失效的可能性较低。提出了未来需深入的研究方向,旨在为高可靠性TGV封装的设计优化提供理论依据。

关键词: TGV, 跌落冲击, Input-G方法, 有限元仿真, 可靠性, Johnson-Cook本构模型

Abstract: Through-glass via (TGV) technology has become an important development direction of 3D electronic packaging because of its excellent electrical properties and low cost advantages. However, due to the brittleness of its materials, the structure faces reliability challenges when it is subjected to drop impact. Based on the Input-G method, the finite element model of TGV structure is established, and its mechanical response and failure mechanism under dynamic load are systematically studied. The brittle fracture characteristics of glass substrate and the Johnson-Cook constitutive relation of lead-free solder joint at high strain rate are comprehensively considered in the model. The simulation results show that obvious maximum principal stress concentration occurs at the corner of the glass via wall under a 1 500g, 0.5 ms half-sine impact load, with a peak value of 32.9 MPa, indicating that this region is a potential risk area in the TGV structure. The peak maximum principal stress at the neck of the peripheral solder joint reaches 45 MPa and gradually decreases along the diagonal direction. The maximum equivalent stress at the end of copper column is 33.1 MPa, which is lower than the reference value of pure copper yield strength, indicating that the possibility of yield failure of copper column body is low. The future research direction is put forward, with the aim of providing a theoretical basis for the design optimization of highly reliable TGV packages.

Key words: TGV, drop impact, Input-G method, finite element simulation, reliability, Johnson-Cook constitutive model