关键词: 硅片, 热应力, 翘曲, 温度均匀性

Abstract: The thermal stress is the direct cause of silicon wafer warping deformation. A method to improve the internal temperature uniformity of silicon wafers during the wafer loading process was proposed to reduce the warping deformation of silicon wafers. The loading process parameters affecting the silicon wafer warping were studied. The experimental results show that the internal temperature uniformity can be improved by optimizing the offset parameter and adjusting the output power of the upper heating lamp. When the offset parameter is 10/6/-3 and the output power of the upper lamp is 90%, the silicon wafer will not warp.

Key words: silicon wafer, thermal stress, warp, temperature uniformity